Surface structure investigations


The surface structure of different semiconductor materials can be modified in different way. To analyse such modification grazing incident techniques were used due to their surface sensitivity.

Silicon ripples onto a silicon wafer can be achieved by ion bombardment using Argon ions at 60 KeV with an surface-ion beam angle of 60 degrees. These structures were observed in border area of the beam onto the sample. The diffraction experiments show a dependency of the signal oscillation on the penetration depth of the synchrotron radiation. This give evidence for an amorphous layer on the surface of the sample.

ROBL MRH surface science 1

InAs-nano rods were grown on GaAs. The symmetrical 2:1 scans shows that InAs is orientated at the GaAs surface, while the grazing incident scan display trace of the toppled rods.


ROBL MRH surface science 2

First GISAXS experiments were successfully performed on ROBL-MRH. It is shown the GISAXS scattering pattern of free standing InAs quantum dot grown on a GaAs substrate. The sample was provided by M. Schmidtbauer, Institut für Kristallzüchtung, Max-Born-Straße2, D-12489Berlin, Germany. An one dimensional short range ordering with an average dot distance of around 80 nm was determinated.

ROBL MRH surface science 3