Dr. Shengqiang Zhou
Leiter Halbleitermaterialien
Tel.: +49 351 260 2484

Dr. Lars Rebohle
Tel.: +49 351 260 3368

Publikationen FWIM

Preprints | 2018 | 2017 | Before 2017


Breaking the doping limit in silicon by deep impurities
Mao Wang, A. Debernardi, Y. Berencén, R. Heller, Chi Xu, Ye Yuan, Yufang Xie, R. Böttger, L. Rebohle, W. Skorupa, M. Helm, S. Prucnal, Shengqiang Zhou

Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
V. A. Soltamov, C. Kasper, A. V. Poshakinskiy, A. N. Anisimov, E. N. Mokhov, A. Sperlich, S. A. Tarasenko, P. G. Baranov, G. V. Astakhov, V. Dyakonov

Tunable disorder and localization in the rare-earth nickelates
Changan Wang, Ching-Hao Chang, Angus Huang, Pei-Chun Wang, Ping-Chun Wu, Lin Yang, Chi Xu, Parul Pandey, Min Zeng, Roman Böttger, Horng-Tay Jeng, Yu-Jia Zeng, Manfred Helm, Ying-Hao Chu, R. Ganesh, Shengqiang Zhou


Strain and Band-Gap Engineering in Ge-Sn Alloys via P Doping
Slawomir Prucnal, Yonder Berencén, Mao Wang, Jörg Grenzer, Matthias Voelskow, Rene Hübner, Yuji Yamamoto, Alexander Scheit, Florian Bärwolf, Vitaly Zviagin, Rüdiger Schmidt-Grund, Marius Grundmann, Jerzy Żuk, Marcin Turek, Andrzej Droździel, Krzysztof Pyszniak, Robert Kudrawiec, Maciej P. Polak, Lars Rebohle, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou
Phys. Rev. Applied 10, 064055 (2018) | arXiv:1901.01721

Epitaxial Mn5Ge3 (100) layer on Ge (100) substrates obtained by flash lamp annealing
Yufang Xie, Ye Yuan, Mao Wang, Chi Xu, Rene Huebner, Joerg Grenzer, Yu-Jia Zeng, Manfred Helm, Shengqiang Zhou, and Slawomir Prucnal
Appl. Phys. Lett. 113, 222401 (2018) | arXiv:1810.09809

Nematicity of correlated systems driven by anisotropic chemical phase separation
Ye Yuan, René Hübner, Magdalena Birowska, Chi Xu, Mao Wang, Slawomir Prucnal, Rafal Jakiela, Kay Potzger, Roman Böttger, Stefan Facsko, Jacek A. Majewski, Manfred Helm, Maciej Sawicki, Shengqiang Zhou, Tomasz Dietl
Phys. Rev. Materials 2, 114601 (2018) | arXiv:1807.05966

Extended Infrared Photoresponse in Te-Hyperdoped Si at Room Temperature
Mao Wang, Y. Berencén, E. García-Hemme, S. Prucnal, R. Hübner, Ye Yuan, Chi Xu, L. Rebohle, R. Böttger, R. Heller, H. Schneider, W. Skorupa, M. Helm, and Shengqiang Zhou
Physical Review Applied 10, 024054 (2018) | arXiv:1809.00983

All-optical quantum thermometry based on spin-level cross-relaxation and multicenter entanglement under ambient conditions in SiC
A. N. Anisimov, V. A. Soltamov, I. D. Breev, R. A. Babunts, E. N. Mokhov, G. V. Astakhov, V. Dyakonov, D. R. Yakovlev, D. Suter, P. G. Baranov
AIP Advances 8, 085304 (2018)
AIP press-release

Creation of silicon vacancy in silicon carbide by proton beam writing toward quantum sensing applications
T. Ohshima, T. Satoh, H. Kraus, G. V. Astakhov, V. Dyakonov , P. G. Baranov
Journal of Physics D: Applied Physics 51, 333002 (2018)

Determination of the thermal cycle during flash lamp annealing without a direct temperature measurement
L. Rebohle, M. Neubert, T. Schumann, W. Skorupa
International Journal of Heat and Mass Transfer 126, 1-8 (2018)

Microstructure and charge trapping in in ZrO2- and Si3N4-based superlattice layer systems with Ge nanoparticles
S. Seidel, L. Rebohle, S. Prucnal, D. Lehninger, R. Hübner, V. Klemm, W. Skorupa, J. Heitmann
Thin Solid Films 645, 124-128 (2018)

A coronene-based semiconducting two-dimensional metal-organic framework with ferromagnetic behavior
R. Dong, Z. Zhang, D. C. Tranca, S. Zhou, M. Wang, P. Adler, Z. Liao, F. Liu, Y. Sun, W. Shi, Z. Zhang, E. Zschech, S. Mannsfeld, C. Felser, X. Feng
Nature Communications 9, 2637 (2018)

Activation of acceptor levels in Mn implanted Si by pulsed laser annealing
L. Li, D. Bürger, A. Shalimov, G. J. Kovacs, H. Schmidt, S. Zhou
Journal of Physics D: Applied Physics 51, 165304 (2018)

Ag nanoparticles embedded in Nd:YAG crystals irradiated with tilted beam of 200 MeV Xe ions: optical dichroism correlated to particle reshaping
R. Li, C. Pang, H. Amekura, F. Ren, R. Hübner, S. Zhou, N. Ishikawa, N. Okubo, F. Chen
Nanotechnology 29, 424001 (2018)

Charge Carrier Dynamic in Ga1-xMnxAs Studied by Resistance Noise Spectroscopy
M. Lonsky, J. Teschabai–Oglu, K. Pierz, S. Sievers, H. W. Schumacher, Y. Yuan, R. Böttger, S. Zhou, J. Müller
Acta Physica Polonica A 133, 520-522 (2018)

CMOS‐compatible controlled hyperdoping of silicon nanowires
Y. Berencén, S. Prucnal, W. Möller, R. Hübner, L. Rebohle, R. Böttger, M. Glaser, T. Schönherr, Y. Yuan, M. Wang, Y. M. Georgiev, A. Erbe, A. Lugstein, M. Helm, S. Zhou, W. Skorupa
Advanced Materials Interfaces 5, 1800101 (2018)

Defect-induced exchange bias in a single SrRuO3 layer
C. Wang, C. Chen, C.-H. Chang, H.-S. Tsai, P. Pandey, C. Xu, R. Böttger, D. Chen, Y.-J. Zeng, X. Gao, M. Helm, S. Zhou
ACS Applied Materials and Interfaces 10, 27472-27476 (2018)

Electronic phase separation in insulating (Ga, Mn) As with low compensation: super-paramagnetism and hopping conduction
Y. Yuan, M. Wang, C. Xu, R. Hübner, R. Böttger, R. Jakiela, M. Helm, M. Sawicki, S. Zhou
Journal of Physics: Condensed Matter 30, 095801 (2018) | arXiv:1802.07056

Engineering of high-temperature ferromagnetic Si1–xMnx (x ≈ 0.5) alloyed films by pulsed laser deposition: Effect of laser fluence
P. Pandey, A. B. Drovosekov, M. Wang, C. Xu, S. N. Nikolaev, K. Y. Chernoglazov, A. O. Savitsky, N. M. Kreines, K. I. Maslakov, E. A. Cherebilo, V. A. Mikhalevsky, O. A. Novodvorskii, V. V. Tugushev, V. V. Rylkov, M. Helm, S. Zhou
Journal of Magnetism and Magnetic Materials 459 206-210 (2018)

Enhancing the Magnetic Moment of Ferrimagnetic NiCo2O4 via Ion Irradiation driven Oxygen Vacancies
P. Pandey, Y. Bitla, M. Zschornak, M. Wang, C. Xu, J. Grenzer, D. C. Meyer, Y. Y. Chin, H. J. Lin, C. T. Chen, S. Gemming, M. Helm, Y. H. Chu, S. Zhou
APL Materials 6, 066109 (2018) (Open access)

Fabrication of Y128-and Y36-cut lithium niobate single-crystalline thin films by crystal-ion-slicing technique
Y. Shuai, C. Gong, X. Bai, C. Wu, W. Luo, R. Böttger, S. Zhou, B. Tian, W. Zhang
Japanese Journal of Applied Physics 57, 04FK05-1-04FK05-5 (2018)

Investigation of a possible electronic phase separation in the magnetic semiconductors Ga1−xMnxAs and Ga1−xMnxP by means of fluctuation spectroscopy
M. Lonsky, J. Teschabai-Oglu, K. Pierz, S. Sievers, H. W. Schumacher, Y. Yuan, B. Böttger, S. Zhou, J. Müller
Physical Review B 97, 054413 (2018) | arXiv:1705.02963

Irradiation effects on the structural and optical properties of single crystal β-Ga2O3
C. Liu, Y. Berencén, J. Yang, Y. Wei, M. Wang, Y. Yuan, C. Xu, Y. Xie, X. Li, S. Zhou
Semiconductor Science and Technology 33, 095022 (2018)

Lithium Niobate Crystal with Embedded Au Nanoparticles: A New Saturable Absorber for Efficient Mode‐Locking of Ultrafast Laser Pulses at 1 µm
C. Pang, R. Li, Z. Li, N. Dong, C. Cheng, W. Nie, R. Böttger, S. Zhou, J. Wang, F. Chen
Advanced Optical Materials 16, 1870065 (2018)

Magneto-optical spectroscopy of diluted magnetic semiconductors GaMnAs prepared by ion implantation and further impulse laser annealing
E. A. Gan'Shina, L. L. Golik, Z. E. Kun'Kova, G. S. Zykov, I. V. Bykov, A. I. Rukovishnikov, Y. Yuan, R. Böttger, S. Zhou
Journal of Magnetism and Magnetic Materials 459, 141-146 (2018)

On the insulator-to-metal transition in titanium-implanted silicon
F. Liu, M. Wang, Y. Berencén, S. Prucnal, M. Engler, R. Hübner, Y. Yuan, R. Heller, R. Böttger, L. Rebohle, W. Skorupa, M. Helm, S. Zhou
Scientific Reports 8, 4164 (2018)

Plasmonic nanoparticles embedded in single crystals synthesized by gold ion implantation for enhanced optical nonlinearity and efficient Q-switched lasing
W. J. Nie, Y. X. Zhang, H. H. Yu, R. Li, R. Y. He, N. N. Dong, J. Wang, R. Hübner, R. Böttger, S. Q. Zhou, H. Amekura, F. Chen
Nanoscale 10, 4228-4236 (2018)

p-type co-doping effect of (Ga,Mn)P: Magnetic and magneto-transport properties
C. Xu, Y. Yuan, M. Wang, H. Hentschel, R. Böttger, M. Helm, S. Zhou
Journal of Magnetism and Magnetic Materials 459, 102-105 (2018)

Surface modifications of crystal-ion-sliced LiNbO3 thin films by low energy ion irradiations
X. Bai, Y. Shuai, C. Gong, C. Wu, W. Luo, R. Böttger, S. Zhou, W. Zhang
Applied Surface Science 434, 669-673 (2018)

Switching the uniaxial magnetic anisotropy by ion irradiation induced compensation
Y. Yuan, T. Amarouche, C. Xu, A. Rushforth, R. Boettger, K. Edmonds, R. Campion, B. Gallagher, M. Helm, H. von Bardeleben, S. Q. Zhou
Journal of Physics D: Applied Physics 51, 145001 (2018)


Doping by flash lamp annealing
S. Prucnal, L. Rebohle, W. Skorupa
Materials Science in Semiconductor Processing 62, 115-127 (2017)

Engineering of optical and electrical properties of ZnO by non-equilibrium thermal processing: The role of zinc interstitials and zinc vacancies
S. Prucnal, J. Wu, Y. Berencen, M. O. Liedke, A. Wagner, F. Liu, M. Wang, L. Rebohle, S. Zhou, H. Cai, W. Skorupa
Journal of Applied Physics 122, 035303 (2017)

Formation of InxGa1-xAs nanocrystals in thin Si layers by ion implantation and flash lamp annealing
R. Wutzler, L. Rebohle, S. Prucnal, J. Grenzer, R. Hübner, R. Böttger, W. Skorupa, M. Helm
New Journal of Physics 19, 063019 (2017)

In situ ohmic contact formation for n-type Ge via non-equilibrium processing
S. Prucnal, J. Frigerio, E. Napolitani, A. Ballabio, Y. Berencén, L. Rebohle, M. Wang, R. Böttger, M. Voelskow, G. Isella, R. Hübner, M. Helm, S. Zhou, W. Skorupa
Semiconductor Science and Technology 32, 115006 (2017)

Local formation of InAs nanocrystals in Si by masked ion implantation and flash lamp annealing
L. Rebohle, R. Wutzler, S. Prucnal, R. Hübner, Y. M. Georgiev, A. Erbe, R. Böttger, M. Glaser, A. Lugstein, M. Helm, W. Skorupa
Physica Status Solidi (C) 14, 1700188 (2017)

Millisecond thermal processing using flash lamps for the advancement of thin layers and functional coatings
W. Skorupa, T. Schumann, L. Rebohle
Surface & Coatings Technology 314, 169-176 (2017)

Evidence for self-organized formation of logarithmic spirals during explosive crystallization of amorphous Ge:Mn layers
D. Bürger, S. Baunack, J. Thomas, S. Oswald, H. Wendrock, L. Rebohle, T. Schumann, W. Skorupa, D. Blaschke, T. Gemming, O. G. Schmidt, H. Schmidt
Journal of Applied Physics 121, 184901 (2017)

Achievement of a table-like magnetocaloric effect in the dual-phase ErZn2/ErZn composite
L. Li, Y. Yuan, Y. Qi, Q. Wang, S. Zhou
Materials Research Letters 6, 67-71 (2017)

Annealing effect on ferromagnetic properties, hole concentration and electronic band structure of GaMnAs epitaxial layers
J. J. Zhu, L. Li, L. Chen, S. Prucnal, J. Grenzer, J. H. Zhao, M. Helm, S. Q. Zhou
Journal of Materials Science 28, 17622-17626 (2017)

Coupling of ferromagnetism and structural phase transition in V2O3/Co bilayers
C. Wang, C. Xu, M. Wang, Y. Yuan, H. Liu, L. Dillemans, P. Homm, M. Menghini, J.-P. Locquet, C. V. Haesendonck, S. Zhou, S. Ruan, Y.-J. Zeng
Journal of Physics D: Applied Physics 50, 495002 (2017)

Defect-induced magnetism in SiC probed by nuclear magnetic resonance
Z. T. Zhang, D. Dmytriieva, S. Molatta, J. Wosnitza, Y. Wang, M. Helm, S. Zhou, H. Kühne
Physical Review B 95, 085203 (2017) | arXiv:1611.08186

Electrochemical properties and optical transmission of high Li+ conducting LiSiPON electrolyte films
Y. Su, J. Falgenhauer, T. Leichtweiß, M. Geiß, C. Lupó, A. Polity, S. Zhou, J. Obel, D. Schlettwein, J. Janek, B. Meyer
Physica Status Solidi (B) 254, 1600088 (2017)

Giant Enhancement of Nonlinear Optical Response in Nd:YAG Single Crystals by Embedded Silver Nanoparticles
R. Li, N. Dong, C. Cheng, F. Ren, R. Hübner, J. Wang, S. Zhou, F. Chen
ACS Omega 2, 1279-1286 (2017)

Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC
Y. Liu, Y. Yuan, F. Liu, R. Böttger, W. Anwand, Y. Wang, A. Semisalova, A. Ponomaryov, X. Lu, A. T. N’Diaye, E. Arenholz, V. Heera, W. Skorupa, M. Helm, S. Zhou
Physical Review B 95, 195309 (2017) | arXiv:1705.07793

Interplay between localization and magnetism in (Ga,Mn)As and (In,Mn)As
Y. Yuan, C. Xu, R. Hübner, R. Jakiela, R. Böttger, M. Helm, M. Sawicki, T. Dietl, S. Zhou
Physical Review Materials 1, 054401 (2017) | arXiv:1709.05043

Magnetic anisotropy of polycrystalline high-temperature ferromagnetic MnxSi1-x (x≈0.5) alloy films
A. B. Drovosekova, N. M. Kreines, A. O. Savitsky, S. V. Kapelnitsky, V. V. Rylkov, V. V. Tugushev, G. V. Prutskov, O. A. Novodvorskii, A. V. Shorokhova, Y. Wang, S. Zhou
Journal of Magnetism and Magnetic Materials 429, 305-313 (2017)

Monovacancy paramagnetism in neutronirradiated graphite probed by 13C NMR
Z. T. Zhang, C. Xu, D. Dmytriieva, S. Molatta, J. Wosnitza, Y. T. Wang, M. Helm, S. Zhou, H. Kühne
Journal of Physics: Condensed Matter 29, 465801 (2017)

Observation of large magnetocaloric effect in equiatomic binary compound ErZn
L. Li, Y. Yuan, C. Xu, Y. Qi, S. Zhou
AIP Advances 7, 056401 (2017)

Realizing the insulator-to-metal transition in Se-hyperdoped Si via non-equilibrium material processing
F. Liu, S. Prucnal, Y. Berencén, Z. Zhang, Y. Yuan, Y. Liu, R. Heller, R. Böttger, L. Rebohle, W. Skorupa, M. Helm, S. Zhou
Journal of Physics D: Applied Physics 50, 415102 (2017)

Reversible Tuning of Ferromagnetism and Resistive Switching in ZnO/Cu Thin Films
M. Younas, C. Xu, M. Arshad, L. Ho, S. Zhou, F. Azad, M. Akhtar, S. Su, W. Azeem, F. Ling
ACS Omega 2, 8810-8817 (2017)

Room-temperature short-wavelength infrared Si photodetector
Y. Berencén, S. Prucnal, F. Liu, I. Skorupa, R. Hübner, L. Rebohle, S. Zhou, H. Schneider, M. Helm, W. Skorupa
Scientific Reports 7, 43688 (2017)

Superconducting Ferromagnetic Nanodiamond
G. Zhang, T. Samuely, Z. Xu, J. K. Jochum, A. Volodin, S. Zhou, P. W. May, O. Onufriienko, J. Kačmarčík, J. A. Steele, J. Li, J. Vanacken, J. Vacík, P. Szabó, H. Yuan, M. B. J. Roeffaers, D. Cerbu, P. Samuely, J. Hofkens, V. V. Moshchalkov
ACS Nano 11, 5358-5366 (2017)

Tailoring Optical Properties of Atomically-Thin WS2 via Ion Irradiation
L. N. Tan, Y. Tan, M. Ghorbani-Asl, R. Boettger, S. Kretschmer, S. Q. Zhou, Z. Y. Huang, A. V. Krasheninnikov, F. Chen
Nanoscale 9, 11027-11034 (2017)

Towards diluted magnetism in TaAs
Yu Liu, Z. Li, L. Guo, X. Chen, Y. Yuan, C. Xu, R. Hübner, S. Akhmadaliev, A. V. Krasheninnikov, A. T. N'Diaye, E. Arenholz, M. Helm, S. Zhou
Physical Review Materials 1, 044203 (2017) | arXiv:1709.04605


Dr. Shengqiang Zhou
Leiter Halbleitermaterialien
Tel.: +49 351 260 2484

Dr. Lars Rebohle
Tel.: +49 351 260 3368