Publikationsrepositorium - Helmholtz-Zentrum Dresden-Rossendorf
1 PublikationMBE-grown GaAs/AlGaAs and strained InGaAs/AlGaAs/GaAs quantum cascade lasers
Strasser, G.; Gianordoli, S.; Schrenk, W.; Gornik, E.; Mücklich, A.; Helm, M.
Abstract
We demonstrate the realization of a quantum cascade laser (QCL) based on strained InGaAs/AlGaAs/GaAs grown on GaAs substrate using molecular beam epitaxy. The material is compared to a GaAs/AlGaAs structure with nominally identical radiative transitions. Lasing at 10 microns was achieved in the strained and the unstrained material. The strained material shows an improved temperature performance with a T0=112K between 125 K and 200 K and a maximum working temperature of T=200 K.
Keywords: quantum cascade laser; infrared laser; unipolar laser; intersubband laser; strained InGaAs
- Journal of Crystal Growth 227-228 (2001) 197-201
Permalink: https://www.hzdr.de/publications/Publ-3527