Kontakt

Dr. Matthias Posselt

m.posseltAthzdr.de
Tel.: +49 351 260 3279

Defects and dopants in semiconductor materials (Si, Ge, SiC)

Ion implantation, defect formation and evolution


Structure, energetics, migration, and recombination of defects 


Implantation and doping


Kontakt

Dr. Matthias Posselt

m.posseltAthzdr.de
Tel.: +49 351 260 3279